2sb1424 / 2sa1585s transistors rev.a 1/3 low v ce ( sat ) transistor ( ? 20v, ? 3a) 2sb1424 / 2sa1585s z features 1) low v ce(sat) . v ce(sat) = ? 0.2v (typ.) (i c /i b = ? 2a / ? 0.1a) 2) excellent dc current gain characteristics. 3) complements the 2sd2150 / 2sc4115s. z structure epitaxial planar type pnp silicon transistor z external dimensions (unit : mm) 30.2 (15min.) 40.2 20.2 0.45 0.5 0.45 5 (1) (2) (3) ?0.05 + 0.15 + 0.15 ?0.05 2.5 + 0.4 ?0.1 3min. 2sa1585s (1) emitter (2) collector (3) base rohm : spt eiaj : sc-72 2sb1424 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 0.3 ?0.1 + 0.2 ?0.05 + 0.1 + 0.2 ?0.1 (3)(2)(1) 4.0 1.00.2 0.50.1 2.5 3.00.2 1.50.1 1.50.1 0.40.1 0.50.1 0.40.1 0.4 1.50.1 4.5 1.60.1 ? denotes h fe abbreviated symbol: ae ? z absolute maximum ratings (ta=25 c) parameter v cbo v ceo v ebo i c p c tj tstg ?20 v v v a w c c ?20 ?6 ?3 ? ?2 i cp a(pulse) ?5 0.5 2sb1424 2sb1424 2sa1585s 0.4 150 ?55 to 150 symbol limits unit ? single pulse pw=10ms 2sa1585s collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
2sb1424 / 2sa1585s transistors rev.a 2/3 z electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ?20 ?20 ?6 ? ? 120 ? ? ? ? ? ? ? ? ? ? 240 35 ? ? ? ?0.1 ?0.1 390 ?0.5 ? ? vi c = ?50 a i c = ?1ma i e = ?50 a v cb = ?20v v eb = ?5v v ce = ?2v, i c = ?0.1a i c /i b = ?2a/ ?0.1a v ce = ?2v, i e =0.5a, f=100mhz v cb = ?10v, i e =0a, f=1mhz v v a a ? v mhz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance z packaging specifications and h fe tp t100 5000 1000 ? ? qr h fe qr 2sa1585s 2sb1424 type package code basic ordering unit (pieces) taping h fe values are classified as follows : item q r h fe 120 to 270 180 to 390 z electrical characteristic curves ?1m ?2m ?5m ?0.01 ?0.02 ?0.05 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2 ?1.4 collector current : i c (a) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics v ce = ?2v ta=100c ?40c 25c 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 collector current : i c (a) collector to emitter voltage : v ce (v) ?2ma ?6ma ?4ma ta=25c i b =0a ?8ma ?10ma ?20ma ?12ma ?14ma ?16ma ?18ma fig.2 grounded emitter output characteristics ( ) 0 ?1 ?2 ?3 ?4 ?5 0 ?1 ?2 ?3 ?4 ?5 collector current : i c (a) collector to emitter voltage : v ce (v) ta=25c ?20ma ? 25ma ?30ma ? 35ma ? 40ma ?5ma ?15ma ?10ma i b =0a ?45ma ?50ma fig.3 grounded emitter output characteristics ( )
2sb1424 / 2sa1585s transistors rev.a 3/3 ? 2m ? 5m ? 0m ? 20m ? 50m ? 100m ? 200m ? 500m ? 1 ? 2 ? 5 ? 10 ? 1m dc current gain : h fe collector current : i c (a) 5k 2k 1k 500 200 100 50 20 10 5 v ce = ?2v ta=100c 25c ?40c fig.4 dc current gain vs. collector current ?2 ?2m ?5m ?10m ?20m ?50m ?100m ?200m ?500m ?1 ? 2m ? 5m ? 10 m ? 20m ? 50m ? 100m ? 200m ? 500m ? 2 ? 1 ? 5 ? 10 ? 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) i c /i b =10 ta=100c ?40c 25c fig.5 collector-emitter saturation voltage vs. collector curren ( ) ?2 ?2m ?5m ?10m ?20m ?50m ?100m ?200m ?500m ?1 ? 2m ? 5m ? 10m ? 20m ? 50m ? 100m ? 200m ? 500m ? 2 ? 1 ? 5 ? 10 ? 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) i c /i b =20 ta=100c ?40c 25c fig.6 collector-emitter saturation voltage vs. collector current ( ) emitter input capacitance : c ib (pf) collector output capacitance : c ob (pf) emitter to base voltage : v eb (v) collector to base voltage : v cb (v) 10 20 50 100 200 500 1000 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ta=25c f=1mhz i e =0a i c =0a c ib c ob fig.8 gain bandwidth product vs. emitter current collector output capacitance vs. collector-base voltage ?2 ?2m ?5m ?10m ?20m ?50m ?100m ?200m ?500m ?1 ? 2m ? 5m ? 10 m ? 20m ? 50m ? 2 ? 1 ? 5 ? 10 ? 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) ? 100m ? 200m ? 500m ?40c 25c ta=100c i c /i b =50 fig.7 collector-emitter saturation voltage vs. collector current ( ) 1 2 5 10 20 50 100 200 500 1000 transition frequency : f t (mhz) emitter current : i e (ma) 1000 500 200 100 50 20 10 5 2 1 ta=25c v ce = ?2v fig.9 emitter input capacitance vs. emitter base voltage
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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